Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 55, Issue 46, Pages -Publisher
IOP Publishing Ltd
DOI: 10.1088/1361-6463/ac8a58
Keywords
4H-SiC; dislocations; single crystals; epitaxial layers
Categories
Funding
- 'Pioneer' and 'Leading Goose' R&D Program of Zhejiang [2022C01021]
- National Key Research and Development Program of China [2017YFA0205704]
- Natural Science Foundation of China [91964107, 61774133, U20A20209]
- Fundamental Research Funds for the Central Universities [2018XZZX003-02]
- Natural Science Foundation of China for Innovative Research Groups [61721005]
- Zhejiang University Education Foundation Global Partnership Fund
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This topical review provides an introduction to the classification and properties of dislocations in 4H-SiC, as well as their generation, evolution, and elimination processes. The effects of dislocations on the electronic and optical properties of 4H-SiC materials and devices are also discussed, along with insights for further control of dislocations.
Owing to the superior properties of the wide bandgap, high carrier mobility, high thermal conductivity and high stability, 4H silicon carbide (4H-SiC) holds great promise for applications in electrical vehicles, 5G communications, and new-energy systems. Although the industrialization of 150 mm 4H-SiC substrates and epitaxial layers has been successfully achieved, the existence of a high density of dislocations is one of the most severe bottlenecks for advancing the performance and reliability of 4H-SiC based high-power and high-frequency electronics. In this topical review, the classification and basic properties of dislocations in 4H-SiC are introduced. The generation, evolution, and annihilation of dislocations during the single-crystal growth of 4H-SiC boules, the processing of 4H-SiC wafers, as well as the homoepitaxy of 4H-SiC layers are systematically reviewed. The characterization and discrimination of dislocations in 4H-SiC are presented. The effect of dislocations on the electronic and optical properties of 4H-SiC wafers and epitaxial layers, as well as the role of dislocations on the performance and reliability of 4H-SiC based power devices are finally presented. This topical review provides insight into the fundamentals and evolution of dislocations in 4H-SiC, and is expected to provide inspiration for further control of dislocations in 4H-SiC.
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