Homoepitaxial GaN terahertz planar Schottky barrier diodes

In this work, a new type of terahertz Schottky barrier diode (SBD) based on homoepitaxial gallium nitride (GaN) was fabricated for high-power and high-frequency multiplier applications. The measured full width at half maximum of x-ray diffraction peaks for homoepitaxial GaN (002) and (102) plane is only one third of the heteroepitaxial GaN on sapphire substrate. Additionally, the increased electron mobility in both n-/n+ GaN epitaxial layers, induced by improved material quality, can effectively reduce the epitaxial resistance (R (epi)) and the spreading resistance. As a result, the total series resistance of the fabricated GaN SBD is 13.7 omega, which is only 65% of that of heteroepitaxial GaN on a sapphire substrate. Additionally, the cut-off frequency (f (c)) is improved to 1.61 THz at zero bias voltage and the measured breakdown voltage is 16.17 V at -1 mu A.

Automated summary

In this study, a new type of high-frequency and high-power terahertz Schottky barrier diode based on homoepitaxial gallium nitride (GaN) was fabricated. The homoepitaxial GaN demonstrated smaller x-ray diffraction peaks and increased electron mobility compared to heteroepitaxial GaN on sapphire substrate. These improvements resulted in lower resistances and higher cut-off frequency for the fabricated GaN SBD.