4.6 Article

Effects of applying different type SiO2 precursors on the structure of selected zirconia-silica gels

Journal

JOURNAL OF MOLECULAR STRUCTURE
Volume 1264, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.molstruc.2022.133143

Keywords

ZrO2-SiO2 system; Sol-gel method; FTIR; X-ray diffraction; t-ZrO2

Funding

  1. Ministry of Education and Science [16.16.160.557]

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This study focuses on the synthesis of zirconia-silica materials using the sol-gel method. Different types of silica precursors were used, and the samples were characterized using structural and thermal analysis methods. The results show variations in the crystallization behavior of zirconia and silica in the samples under different conditions.
Zirconia-silica materials are well known and studied for a long time. Application of the sol-gel method al-lows to expand their properties by introducing new type of components from the appropriate precursors used in the process. Simultaneously, facilitates fabrication materials, first of all because of the decrease the temperature of their synthesis. In this work, the main focus was put not on zirconia precursors (as in most articles), but on SiO2 introducing ones. Three different types of silica precursors were applied: TEOS - tetraethoxysilane, Si(OC2H5)(4), DDS - dimethyldiethoxysilane, Si(OC2H5)(2)(CH3)(2) and Aerosil (TM) (silica powder). As ZrO2 introducing component, zirconium (IV) propoxide, Zr(OC3H7)(4) was exclusively applied. As methods of structural investigations, two complementary methods were selected: FTIR spectroscopy and X-Ray diffraction (XRD) in the standard configuration. To obtain additional data, thermal methods: thermogravimetry (TG) and differential scanning calorimetry (DSC) were applied. According to XRD studies, all the obtained samples remained amorphous after annealing up to 500 degrees C. At higher temperatures, t-ZrO2 and m-ZrO2 began to crystallize. The temperature of their formation depended on SiO2 precursor type and SiO2 concentration in the system. In the samples richer in ZrO2, crystallization of t-ZrO2 began only at 1000 degrees C but the tendency of its crystallization was much faster than in the samples richer in SiO2 which was confirmed by comparison of mean crystallite sizes of t-ZrO2 in the samples synthesized with the use of different SiO2 precursors. FTIR spectra of the samples of higher silica con-centration, despite the type of silica precursor, showed progressive formation of silica matrix, in which zirconium atoms were located. (C) 2022 Elsevier B.V. All rights reserved.

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