The transport properties and large magnetoresistance effect in Pr0.7Sr0.3MnO3 film on SrTiO3

The transport properties and magnetoresistance (MR) effect of Pr0.7Sr0.3MnO3 (PSMO) film on SrTiO3 (STO) substrate are investigated in this work. The PSMO film is grown on (001) STO substrate by pulsed laser deposition (PLD). The high-resolution X-ray diffraction (XRD) pattern suggests that the Pr0.7Sr0.3MnO3 film shows the out-of-plane single orientation. Atomic force microscopy (AFM) image shows that the surface of the film is smooth. In addition, the significant interference peaks can be found in the XRD. All these confirm the high quality of the PSMO film grown on STO substrate to some extent. The magnetotransport properties and the MR associated to the double exchange (DE) interactions of the Pr0.7Sr0.3MnO3 film have been studied by the resistivity versus temperature and resistivity versus magnetic field data. The temperature dependence of resistivity shows that the film sample undergoes a metal-to-insulator (MI) transition at MI temperature T-MI. The T-MI gradually increases with the increase of applied magnetic field. Under different fields of 1 T, 2 T, 4 T and 6 T, the maximum values of negative MR (MR = [rho-rho(0)/rho(0)] x 100%) reveal about 47.16%, 53.16%, 86.59% and 92.22%, respectively. Compared with other reports on bulk polycrystalline PSMO compounds and polycrystalline PSMO films, the PSMO film on STO in our work has relatively large MR, which is related to the single-oriented growth of PSMO/STO film. The large MR is conducive to the practical applications in magneto-electronic devices. The applied magnetic field dependence of resistivity shows that near T-MI, the resistance changes significantly with the change of the applied field. This also implies that there is a large MR at around T-MI, which can be explained by the traditional DE mechanism.

Automated summary

In this study, the transport properties and magnetoresistance effect of PSMO film on STO substrate were investigated. The film showed high-quality single orientation growth and exhibited relatively large magnetoresistance, making it suitable for magneto-electronic devices.