Cubic Mixed Semiconductor BAs:N Compounds for Energy Harvesting and Photovoltaic Applications

Recently, mixed crystal semiconductors containing BAs:N have garnered significant attention for the next generation of photovoltaic applications owing to their optoelectronic and elastic properties with moderate energy band gap (E-g). According to Vegard's law, lattice constants undergo slight variations under various condensation conditions. When Born-Huang (BH) stability criteria were applied to determine elastic parameters, the calculated E-g value of BAs1-xNx decreased concerning the increase in As condensation. It was found that these elastic constant values easily fulfilled the BH stability criteria, mechanically stabilizing BAs1-xNx. Moreover, the elastic moduli, Poisson's ratio and other properties were calculated. Our results suggest that BAs1-xNx compounds are ideal candidates for utilization in the above devices. Additionally, the calculated optical properties of this alloy indicated that BAs1-xNx is suitable for practical photo-sensing and photovoltaic applications due to its vast spectral region ranging from ultra-violet to visible, higher absorption peaks, and overall E-g values. The study provides a route for experimental work on photovoltaic applications based on cubic semiconductors.

Automated summary

Recently, BAs:N mixed crystal semiconductors have attracted significant attention as ideal materials for the next generation of photovoltaic applications due to their excellent optoelectronic and elastic properties. The study finds that BAs1-xNx compounds are ideal candidates for photovoltaic devices, as they exhibit mechanical stability and suitable optical properties for practical applications.