Wavelength-dependent conductivity of photo-generated 2DEGs in ultra-pure GaN/AlGaN heterostructures

This study focuses on the wavelength-dependent conductivity of optically-induced 2-dimensional electron gases (2DEGs) in ultra-pure GaN/AlGaN heterostructures grown by Molecular Beam Epitaxy (MBE). Our experiments show that only light with energies larger than the bandgap of GaN (3.4 eV) is able to generate a 2DEG, which is else absent under illumination with wavelengths exceeding 364 nm. The conductivity of the generated 2DEG depends on the number of incident photons with sufficient energy. Moreover, resonant absorption can be clearly observed around the bandgap energy of GaN at room temperature.

Automated summary

This study focuses on the wavelength-dependent conductivity of optically-induced 2-dimensional electron gases (2DEGs) in ultra-pure GaN/AlGaN heterostructures grown by Molecular Beam Epitaxy (MBE). The experiments show that only light with energies larger than the bandgap of GaN (3.4 eV) is able to generate a 2DEG, and the conductivity of the generated 2DEG depends on the number and energy of incident photons. Moreover, resonant absorption around the bandgap energy of GaN can be clearly observed at room temperature.