Using a Au/pitted a-plane GaN substrate to aggregate polar molecules for highly efficient surface-enhanced Raman scattering

Searching for efficient surface-enhanced Raman scattering (SERS) substrates remains a challenge. In this study, we used metal-organic chemical vapor deposition to directly grow a pitted a-plane GaN thin film, subsequently covered by a thin Au layer (similar to 25 nm), for use as a SERS substrate, without the need for any additional etching or lithography process. The SERS substrate containing these micrometer-sized pits provided a low limit of detection (similar to 10(-9) M) for Rhodamine 6G (R6G), with a high enhancement factor (4.27 x 10(8)) relative to normal Raman spectroscopy. Furthermore, Raman spectral mapping indicated that most of the R6G molecules were concentrated in the pits, enhancing the localization of the probe molecules for further analysis. The same molecular localization phenomenon was also effective for polar methylene blue but not for nonpolar paraffin. The molecular aggregation became more ambiguous upon increasing the thickness of the Au layer, suggesting that the polarity of the Ga and N atoms in the pits was responsible for the efficient aggregation of the polar R6G molecules, which could be potentially beneficial for biomedical detection. Published under an exclusive license by AIP Publishing.

Automated summary

In this study, a highly efficient SERS substrate was fabricated by growing pitted GaN thin film and covering it with a thin Au layer using metal-organic chemical vapor deposition. The substrate exhibited low detection limit, high enhancement factor, and molecular localization effect, showing potential applications in biomedical detection.