4.7 Article

Charge transfer dynamics and interlayer exciton formation in MoS2/VOPc mixed dimensional heterojunction

Journal

JOURNAL OF CHEMICAL PHYSICS
Volume 157, Issue 18, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0107791

Keywords

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Funding

  1. U.S. Department of Energy, through the Argonne National Laboratory [CHE-1955806]
  2. U.S. National Science Foundation [R01-GM115761]
  3. National Institutes of Health [NSF DMR-1720139]
  4. National Science Foundation Materials Research Science and Engineering Center at Northwestern University [NSF DMR-2004420]
  5. NSF
  6. National Science Foundation Division of Materials Research [NSF ECCS-2025633]
  7. SHyNE Resource [NSF DMR-1720139]
  8. Northwestern's MRSEC program
  9. CBGS, Basic Energy Science, Office of Science
  10. IIN
  11. [DE-AC02-06CH11357]

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Mixed-dimensional van der Waals heterojunctions exhibit unique interfacial properties and hold promising results for optoelectronic device applications.
Mixed-dimensional van der Waals heterojunctions involve interfacing materials with different dimensionalities, such as a 2D transition metal dichalcogenide and a OD organic semiconductor. These heterojunctions have shown unique interfacial properties not found in either individual component. Here, we use femtosecond transient absorption to reveal photoinduced charge transfer and interlayer exciton formation in a mixed-dimensional type-II heterojunction between monolayer MoS2 and vanadyl phthalocyanine (VOPc). Selective excitation of the MoS2 exciton leads to hole transfer from the MoS2 valence band to VOPc highest occupied molecular orbit in similar to 710 fs. On the contrary, selective photoexcitation of the VOPc layer leads to instantaneous electron transfer from its excited state to the conduction band of MoS2 in less than 100 fs. This light-initiated ultrafast separation of electrons and holes across the heterojunction interface leads to the formation of an interlayer exciton. These interlayer excitons formed across the interface lead to longer-lived charge-separated states of up to 2.5 ns, longer than in each individual layer of this heterojunction. Thus, the longer charge-separated state along with ultrafast charge transfer times provide promising results for photovoltaic and optoelectronic device applications. Published under an exclusive license by AIP Publishing.

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