4.4 Article

Room-Temperature Oscillation of Resonant Tunneling Diodes close to 2 THz and Their Functions for Various Applications

Journal

JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES
Volume 37, Issue 12, Pages 1185-1198

Publisher

SPRINGER
DOI: 10.1007/s10762-016-0321-6

Keywords

Terahertz source; Resonant tunneling diode; High-speed modulation; Frequency-tunable oscillator

Funding

  1. Japan Society for the Promotion of Science
  2. Industry-Academia Collaborative RD Program
  3. CREST Program from Japan Science and Technology Agency
  4. Strategic Information and Communication R&D Promotion Programme from Ministry of Internal Affairs and Communications
  5. Grants-in-Aid for Scientific Research [16H06292, 16K14246] Funding Source: KAKEN

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Compact and coherent source is a key component for various applications of the terahertz (THz) wave. We report on our recent results of THz oscillators using resonant tunneling diodes (RTDs). To achieve high-frequency oscillation, the electron delay time of RTD was reduced with a narrow quantum well and an optimized collector spacer thickness. Conduction loss at the air bridge connecting RTD and slot antenna, which works as a resonator and a radiator, was also reduced. By these structures, a fundamental oscillation up to 1.92 THz was obtained at room temperature. Theoretical calculation shows that an oscillation over 2 THz is further expected by improved structures of RTD and antenna. Using the offset slot antenna and two-element array configuration, high output power of 0.61 mW was obtained at 620 GHz. A direct intensity modulation of RTD oscillators up to 30 GHz, which is useful for high-speed wireless data transmission, was demonstrated. By the integration of a varactor diode, wide frequency sweep of 580-700 GHz in a single device and 580-900 GHz in a four-element array were also demonstrated. This result expands possible applications of RTD oscillators.

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