Growth-microstructure-thermal property relations in AlN thin films

AlN thin films are enabling significant progress in modern optoelectronics, power electronics, and microelectromechanical systems. The various AlN growth methods and conditions lead to different film microstructures. In this report, phonon scattering mechanisms that impact the cross-plane (kappa z; along the c-axis) and in-plane (kappa r; parallel to the c-plane) thermal conductivities of AlN thin films prepared by various synthesis techniques are investigated. In contrast to bulk single crystal AlN with an isotropic thermal conductivity of -330 W/m K, a strong anisotropy in the thermal conductivity is observed in the thin films. The kappa z shows a strong film thickness dependence due to phonon-boundary scattering. Electron microscopy reveals the presence of grain boundaries and dislocations that limit the kappa r. For instance, oriented films prepared by reactive sputtering possess lateral crystalline grain sizes ranging from 20 to 40 nm that significantly lower the kappa r to -30 W/m K. Simulation results suggest that the self-heating in AlN film bulk acoustic resonators can significantly impact the power handling capability of RF filters. A device employing an oriented film as the active piezoelectric layer shows an -2.5x higher device peak temperature as compared to a device based on an epitaxial film. Published under an exclusive license by AIP Publishing.

Automated summary

AlN thin films have great potential for applications in optoelectronics, power electronics, and microelectromechanical systems. The thermal conductivity of these thin films exhibits an anisotropic behavior, which is influenced by film thickness and grain size. Electron microscopy reveals that the presence of grain boundaries and dislocations limits the thermal conductivity. Simulation results indicate that self-heating in AlN thin films significantly affects the power handling capability of RF filters.