High-performance multiple-doped In2O3 transparent conductive oxide films in near-infrared light region

High-quality W, Mo, Ti, Zr, and Ga-doped indium oxide (multiple-doped In2O3) films are deposited at room temperature by direct current magnetron sputtering process under different oxygen proportion, with 200 & DEG;C annealing. A maximum Hall mobility of 71.6 cm(2) V-1 s(-1) is obtained at a middle oxygen proportion of 2%, thanks to the reduction of impurity scattering center, which is nearly three times higher than an ITO film of 23.6 cm(2) V-1 s(-1). The multiple-doped In2O3 films showed a remarkable 30% improvement of the optical transmittance (> 80%) in the near-infrared (NIR) region compared to the ITO film (about 60%), which is mainly attributed to the decrement of free carrier absorption due to low carrier concentration (< 2 x 10(20) cm(-3)), an order magnitude lower than the ITO film (1.56 x 10(21) cm(-3)). Additionally, x-ray diffraction results confirm that the films have a polycrystalline structure with preferential orientation growth in the direction. In the NIR region, the multiple-doped In2O3 films have a superior figure of merit of 5.02 x 10(-3) omega(-1), which is an order magnitude higher than the ITO film (5.31 x 10(-4) omega(-1)). This work reports a new In2O3-based material with both high electrical and optical performance, which is suitable for the application of advanced optoelectronic devices. Published under an exclusive license by AIP Publishing.

Automated summary

In this study, high-quality multiple-doped indium oxide films were successfully deposited by DC magnetron sputtering at room temperature. The films exhibited high Hall mobility and superior optical transmittance, making them suitable for advanced optoelectronic devices.