High dielectric tunability of middle entropy Pb(Sc0.25In0.25Nb0.25Ta0.25)O3 thin films with (111)-preferred orientation

High-performance dielectric tunable materials are expected in modern tunable devices, such as phase shifters, tunable resonator, filters, and antennas, etc. In this work, two strategies were used to improve the performance of dielectric tunability of perovskite oxide thin films: (i) a middle entropy perovskite oxide Pb (Sc0.25In0.25Nb0.25Ta0.25)O-3 (PSINT) was designed to enhance displacement polarization; (.) preferred orientation of the PSINT thin films derived by sol-gel method was modified by substrates. A high dielectric tunability eta similar to 50 %) with a high dielectric tunability strength (eta/E similar to 0.12 % cm/kV) was achieved at a low electric field of similar to 407 kV/cm in the highly (111)-oriented PSINT thin film. Increase the applied electric field, a higher dielectric tunability (eta(max) similar to 65 %) was achieved at similar to 679 kV/cm. Moreover, an excellent thermal stability with a broad working temperature from 223 K to 423 K was obtained, which could be credited to a large relaxor strength of the thin film. The results indicate that the middle entropy PSINT thin film with (111)-orientation has a potential application in modern tunable devices. (c) 2022 Elsevier B.V. All rights reserved.

Automated summary

This study improves the performance of dielectric tunability in perovskite oxide thin films through two strategies, resulting in high dielectric tunability and excellent thermal stability. The findings demonstrate the potential application of middle entropy PSINT thin films in modern tunable devices.