Modulation of resistive switching and magnetism of HfOx film by Co doping

The coexistence of resistive switching and magnetism modulation of Co doped HfOx samples with different doping concentrations was reported in this work. The chemical composition, especially oxygen vacancies was analyzed by XPS technology and the influence of Co dopants on resistive switching and magnetism were demonstrated both experimentally and theoretically by first principles calculation. Improved switching performance such as on/off ratio, uniformity and reliability can be obtained by Co doping. In addition, 5.3 % Co doped HfOx sample behaved different magnetism properties in high resistance state and low resistance state (magnetization change of 61.4 %) due to the modulation of defects concentration. The switching behavior and magnetism were both related to the defects in HfOx film. Therefore, the filamentary model consisting of oxygen vacancies and Co ions were proposed to illustrate switching behavior and its relationship with magnetism. Results provide a new idea to clarify the switching mechanism of RRAM, and indicate the promising applications of Co doped HfO(x )film in the multifunctional electromagnetic devices. (C) 2022 Elsevier B.V. All rights reserved.

Automated summary

The coexistence of resistive switching and magnetism modulation of Co-doped HfOx samples with different doping concentrations is reported in this study. The influence of Co dopants on resistive switching and magnetism is analyzed experimentally and theoretically. The results show that Co doping can improve the switching performance and the Co-doped HfOx samples exhibit different magnetism properties in different resistance states.