Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 921, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2022.165913
Keywords
g-B3N5; Negative Poisson's ratio; Wide band gap; Low thermal conductivity; Tunable photon absorption peak
Categories
Funding
- National Natural Science Foundation of China [52006057, 11904324]
- Fundamental Research Funds for the Central Universities [531119200237, 541109010001]
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body at Hunan University [52175013]
- Natural Science Foundation of Henan Province of China [222300420551]
- China Postdoctoral Science Foundation [2018M642774]
- Lichtenberg high performance computer of the TU Darmstadt
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This article introduces a multifunctional 2D graphene-like boron nitride material (g-B3N5) with a buckling structure, which has been proven to be stable in terms of mechanical, thermal, dynamic, and energetic behaviors. Furthermore, the mechanical, electronic, thermal, and optical properties of the material have been systematically explored, showing excellent performances such as negative Poisson's ratio, ultra-wide band gap, low thermal conductivity, and highly tunable photon absorption peak by strain engineering.
The challenge in materials science is to meet the functional requirements in various aspects, where multifunctional materials can greatly expand the scope of applications. Compounds formed by atoms of boron (B) and nitrogen (N) provide a superior platform for exploring multifunctional materials. However, previous studies mainly focused on three-dimensional due to the controversial stability of two-dimensional (2D) structures. Herein, we designed a multifunctional 2D graphene-like boron nitride material with a buckling structure, namely g-B3N5. The stability is comprehensively proved from the aspects of mechanical, thermal, dynamic, and energetic behaviours. Furthermore, we systematically explored its mechanics, electronics, thermal, and optical properties, respectively. Excellent performances are found in g-B3N5, i.e, negative Poisson's ratio, ultra-wide band gap (4.32 eV), low thermal conductivity (21.08 W/mK), and highly tunable photon absorption peak by strain engineering. The multifunctional performance can bring new vitality to the field of BN-phase semiconductors as a strong competitor of g-BN. (C) 2022 Elsevier B.V. All rights reserved.
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