Synthesis of rare earth doped Si3N4 nanowires with excellent luminescence properties by plasma-assisted direct nitridation method

Si(3)N(4 )nanowires doped with rare earth ions (such as Ce3+, Tb3+, Eu2+ and Eu3+) were synthesized by plasma assisted direct nitridation method using Si, rare earth oxides and N2 as raw materials. The prepared doped Si(3)N(4 )nanowires were characterized by XRD, EDS, XPS, SEM and TEM. The obtained single-crystal doped Si(3)N(4 )nanowires have uniform diameters of about 50-100 nm and lengths of more than 10 mu m. The photoluminescence (PL), PL decay curves as well as thermal quenching behaviors of doped Si3N3 nanowires were systematically investigated. This work provides an effective strategy for doping large-size functional atoms in Si(3)N(4 )nanowires. (C) 2022 Elsevier B.V. All rights reserved.

Automated summary

Si(3)N(4) nanowires doped with rare earth ions were successfully synthesized using plasma assisted direct nitridation method. The prepared nanowires were characterized and their properties were investigated. This study provides an effective strategy for doping large-size functional atoms in Si(3)N(4) nanowires.