Surfactant effect of Bi on InAs quantum dot laser diode

In this study, InAs multiple-stacked quantum dot lasers were investigated in the 1.55 mu m band using the Bi surfactant effect. The Bi surfactant effect increased the size of the quantum dot and changed the emission wavelength from 1522 to 1554 nm. Moreover, the surfactant effect enhanced the internal quantum efficiency of the fabricated broad-area laser from 33% to 54%.

Automated summary

This study investigates InAs multiple-stacked quantum dot lasers in the 1.55 μm band using the Bi surfactant effect. The Bi surfactant effect increases the quantum dot size and changes the emission wavelength, while enhancing the internal quantum efficiency of the fabricated laser.