Journal
INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES
Volume 23, Issue 21, Pages -Publisher
MDPI
DOI: 10.3390/ijms232112912
Keywords
thin-film transistors; solution-grown; crystalline oxide semiconductors; phosphorus doped indium oxide
Funding
- National Natural Science Foundation of China [61704111, 12074263, 62001308]
- Scientific Research Starting Foundation of Jimei University [C622124]
- Natural Science Foundation of Top Talent of SZTU [20200219]
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Solution-grown phosphorus-doped indium oxide thin-film transistors (IPO TFTs) demonstrate promising characteristics such as high mobility and transparency, while effectively inhibiting oxygen-vacancy-related defects.
Solution-grown indium oxide (In2O3) based thin-film transistors (TFTs) hold good prospects for emerging advanced electronics due to their excellent mobility, prominent transparency, and possibility of low-cost and scalable manufacturing; however, pristine In2O3 TFTs suffer from poor switching characteristics due to intrinsic oxygen-vacancy-related defects and require external doping. According to Shanmugam's theory, among potential dopants, phosphorus (P) has a large dopant-oxygen bonding strength (EM-O) and high Lewis acid strength (L) that would suppress oxygen-vacancy related defects and mitigate dopant-induced carrier scattering; however, P-doped In2O3 (IPO) TFTs have not yet been demonstrated. Here, we report aqueous solution-grown crystalline IPO TFTs for the first time. It is suggested that the incorporation of P could effectively inhibit oxygen-vacancy-related defects while maintaining high mobility. This work experimentally demonstrates that dopant with high EM-O and L is promising for emerging oxide TFTs.
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