Electrothermal Averaged Model of a Diode-IGBT Switch for a Fast Analysis of DC-DC Converters

In this article, an electrothermal model of a diode-insulated gate bipolar transistor switch for modeling dc-dc converters is proposed. The formulated model has the form of a subcircuit for the simulation program with integrated circuits emphasis (SPICE) program and enables computations of both electrical characteristics of the converter and junction temperatures of the semiconductor devices. The equations used in the formulated model allow modeling the operation of the converter in both continuous conduction mode and discontinuous conduction mode. The correctness of the formulated model is experimentally verified for the boost converter. Good accuracy of modeling the characteristics of the converter is obtained. A .cir file based on the formulated model for an analysis in the SPICE program is attached to the article as the active content.

Automated summary

This article proposes an electrothermal model of a diode-insulated gate bipolar transistor switch for modeling dc-dc converters. The model can compute both the electrical characteristics of the converter and the junction temperatures of the semiconductor devices. The model's equations allow for modeling the converter's operation in both continuous conduction mode and discontinuous conduction mode. The correctness of the model is experimentally verified for the boost converter, showing good accuracy in modeling the converter's characteristics. An active .cir file based on the model for analysis in the SPICE program is attached to the article.