4.5 Article

L-Shaped High Performance Schottky Barrier FET as Dielectrically Modulated Label Free Biosensor

Journal

IEEE TRANSACTIONS ON NANOBIOSCIENCE
Volume 21, Issue 4, Pages 542-548

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNB.2021.3131372

Keywords

Biosensing; FET; Schottky; sensitivity; selectivity

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In this work, an improved sensitivity L-Shaped Schottky Barrier FET biosensing device is demonstrated. The device utilizes dual material gate with different work functions and Hafnium Oxide as the gate dielectric. The electrical characteristics of biomolecules modulate the Schottky Barrier width, leading to changes in the device's current. Comparative analysis with conventional devices reveals better sensitivity performance in the proposed device for both neutral and charged biomolecules, as well as improvements in sensitivity parameters and selectivity. Additionally, the proposed device shows better sensitivity performance at low and high temperatures compared to state-of-the-art biosensing devices.
In this work, we demonstrate the realization of L-Shaped Schottky Barrier FET as a biosensing device with improved sensitivity. The proposed device uses dual material gate with work functions of 4.2 eV (Al) and 4.8 eV (Cu) and Hafnium Oxide (HfO2) as the gate dielectric. In order to detect the biomolecule, a nano-gap cavity is created in the vertical gate (Gate1) by etching out the oxide. The electrical characteristics of biomolecules such as dielectric constant and charge density modulate the Schottky Barrier width, which in turn, changes the drive current of the device. Various sensitivity parameters have been thoroughly investigated at V-DS = V-GS = 0.5V and a comparative analysiswith the conventional device has been performed. The results so obtained reveal that I-ON sensitivity of the proposed device is much better for both neutral as well as charged biomolecules (maximumof 21x for neutral, at K= 12; 20x for charged biomolecules at rho = -5x10(10)cm(-2), at K = 12). Besides this, the I-ON/I-OFF sensitivity, transconductance (g(m)) sensitivity and selectivity show similar improvements. Further, the proposed device shows better sensitivity performance at low as well as at higher temperatures as compared to the state-of-the-art biosensing devices.

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