Quantitative Analysis on the Field Strength in the Addressable Gated ZnO Nanowire Field Emitter Arrays: Model and Experiment

Addressable gated field emitter arrays (FEAs) have important applications in vacuum microelectronic devices. To fabricate high-performance device, a comprehensive understanding on the field emission characteristics of gated FEAs is necessary, which requires a quantitative analysis method. In this work, a general model based on Fowler-Nordheim (FN) theory has been established to fulfill this blank. It is found that nonlinear FN plot with positive and negative slopes could occur in gated FEAs, which its turning point is related to the proportion of anode and gate field. This provides a way for obtaining the field strengths applied by the anode and gate structures. Besides, the transconductance of the gated FEAs increases exponentially with the total surface field, which indicates that both the anode and gate field need to be increased for achieving a high transconductance device. As a demonstration, the addressable gated ZnO nanowire FEAs using multimicrosize pattern with radius as small as 2.5 mu m have been designed and fabricated. The relationship between the transconductance and anode voltage can be well fitted by using the model, which deduces the proportion of anode and gate field in the device to be about 3:1.

Automated summary

This work investigates the field emission characteristics of addressable gated field emitter arrays (FEAs) and establishes a general model based on FN theory. The study reveals that nonlinear FN plots with positive and negative slopes can occur in gated FEAs, and the turning point of the curves is related to the proportion of anode and gate field. In addition, the research finds that the transconductance of the gated FEAs increases exponentially with the total surface field. A demonstration using addressable gated ZnO nanowire FEAs is also presented, showing a well-fitted relationship between the transconductance and anode voltage.