Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 9, Pages 5082-5087Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3188950
Keywords
Schottky barriers; Argon; Substrates; Ion implantation; Current density; Schottky diodes; Fabrication; Argon (Ar) ion implantation; GaN; self-alignment technique; trench structure
Funding
- National Key Research and Development Program of China [2017YFB0404102]
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This study successfully fabricated high-performance GaN vertical Schottky barrier diodes and demonstrated the potential of the self-alignment trench structure in improving the breakdown voltage.
In this work, high-performance GaN vertical Schottky barrier diodes (SBDs) are successfully fabricated on the GaN-on-GaN substrate by using the self-alignment trench structure and argon (Ar) ion implantation. The fabricated diodes achieve a high current ON/OFF ratio of 10(8) and high breakdown voltage (BV) of 656 V due to the reduced surface electric field effect. Besides, the temperature-dependent reverse leakage characteristics show that two Poole-Frenkel emission (PFE) processes dominate the carrier transport. This work shows great potential of the self-alignment trench structure in fabricating GaN vertical SBDs to improve the BV with simply fabrication process.
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