Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 69, Issue 10, Pages 5664-5670Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2022.3200629
Keywords
AlGaN/GaN Schottky barrier diode (SBD); reliability; surge current; transient energy dissipation
Funding
- National Natural Science Foundation of China [62004099, 61921005, 91850112, U2141241]
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This work demonstrates, for the first time, the ability of AlGaN/GaN SBDs to withstand both surge current shocks and transient energy, addressing the device reliability requirements for inductive switching applications. The high surge current density and critical transient dissipating energy density achieved in this study, along with superior switching performance, make significant progress towards the promise of AlGaN/GaN SBDs for high-reliability and high-power applications.
Robust reliability is essential for electronic devices against inductive transient shocks in power switching applications. In this work, rugged surge current tolerance and transient energy sustaining capability are simultaneously demonstrated in AlGaN/GaN Schottky barrier diodes (SBDs) for the first time, which greatly fills the research gap toward the device reliability requirements for inductive switching applications. Such robustness is attributed to the combined advantages of the uniquely designed buried-ohmic anode structure and efficient thermal management enabled by substrate thinning and flipchip packaging techniques. The resultant device exhibits a high surge current density of 3.4 kA/cm(2) (42 A) and a critical transient dissipating energy density of 1.5 J/cm(2) (18.6 mJ). All these values are the highest reported in AIGaN/GaN SBDs. In particular, the superior switching performance with nanosecond reverse recovery time is achieved under a 400-V operating condition with a fast di/dt of 200 mu/ps, implying the desired functionality of the proposed device architecture. This work, thus, makes a significant step in reaching the promise of AlGaN/GaN SBDs for high-reliability and high-power applications.
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