4.6 Article

A 96.9-dB-Resolution 109-μW Second-Order Robust Closed-Loop VCO-Based Sensor Interface for Multiplexed Single-Ended Resistance Readout in 180-nm CMOS

Journal

IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 57, Issue 9, Pages 2764-2777

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2022.3163284

Keywords

Phase frequency detectors; Temperature sensors; Voltage-controlled oscillators; Temperature measurement; Linearity; Voltage control; Phase locked loops; Closed loop; delta-sigma modulation; digital readout circuits; process; voltage; temperature (PVT); readout IC (ROIC); resistive sensor readout circuit; second-order noise shaping; sensor applications; sensor interface; VCO-based analog-to-digital converter (ADC); voltage-controlled oscillator (VCO)

Funding

  1. Vlaams Agentschap Innoveren en Ondernemen (VLAIO), Belgium

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This article presents a robust voltage-controlled oscillator (VCO)-based front end for multiplexed single-ended resistive sensor readout applications. The architecture features a highly digital and area-compact design, and ensures high robustness against supply and temperature variations. The direct conversion of the sensor input resistance enables high linearity and high resolution readout.
This article presents a highly digital robust voltage-controlled oscillator (VCO)-based front end for multiplexed single-ended resistive sensor readout applications. The architecture features a modified digital phase-locked loop (DPLL) structure that enables second-order noise shaping without any operational transconductance amplifiers (OTAs) and a single feedback digital-to-analog converter (DAC). The direct conversion of the sensor input resistance to time-domain information obviates the need for any conditioning circuit, thus resulting in a highly digital and area-compact architecture. The closed loop substantially reduces the amplitude of the signal at the VCO input, thereby achieving high linearity. To ensure high robustness against supply and temperature variations, a double measurement approach is employed. Fabricated in a 180-nm CMOS process with a 0.1-mm(2) active area, the sensor readout consumes 109 mu W of power and achieves a resolution of 96.9 dB for 0.5-ms conversion time, resulting in a Schreier figure of merit (FoM) of 166.5 dB. The circuit only requires a cheap and efficient single-point trimming calibration at room temperature. The low conversion time enables multiplexing among multiple sensor readouts. The supply and temperature sensitivities are 0.4,%/V and 36 ppm/degrees C, respectively.

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