4.6 Article

An Ultra-Low Jitter, Low-Power, 102-GHz PLL Using a Power-Gating Injection-Locked Frequency Multiplier-Based Phase Detector

Journal

IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume 57, Issue 9, Pages 2829-2840

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2021.3123156

Keywords

Voltage-controlled oscillators; Phase locked loops; Jitter; Phase noise; Phase frequency detectors; Bandwidth; Detectors; 6G; beyond 5G; detection gain; injection locked; jitter; phase noise; phase-locked loop (PLL); power gating; sampling; W-band

Funding

  1. Samsung Research Funding Center of Samsung Electronics [SRFC-IT1702-51]
  2. IC Design Education Center (IDEC), South Korea

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This work introduces an ultra-low jitter, direct W-band phase-locked loop (PLL) utilizing a power-gating injection-locked frequency multiplier (PG-ILFM) and a frequency-offset canceller (FOC) to achieve high phase-error-detection gain, wide loop bandwidth, and low jitter performance. The proposed PLL, fabricated in a 65-nm CMOS process, demonstrated a rms jitter of 82 fs at 102 GHz and achieved an $FoM{_{{JIT}}}$ of -248.2 dB, which is the best among existing W-band frequency synthesizers.
This work presents an ultra-low jitter, direct W-band phase-locked loop (PLL). Using the proposed power-gating injection-locked frequency multiplier (PG-ILFM)-based phase detector (PD) that can maintain a high phase-error-detection gain even at high frequencies above 100 GHz, this W-band PLL can achieve a very low in-band phase noise. Due to this intrinsically low in-band phase noise, the bandwidth of the PLL can be extended so that it can suppress the poor phase noise of the W-band voltage-controlled oscillator (VCO). The frequency-offset canceller (FOC) is also presented to remove the possible frequency offset between the main VCO of the PLL and the replica VCO of the PG-ILFM-based PD. Operating in the background, the FOC can ensure high phase-error-detection gain and wide loop bandwidth and, thus, the low-jitter performance of the PLL. The proposed PLL was fabricated in a 65-nm CMOS process, and it used a power of 22.5 mW and an area of 0.16 mm(2). The rms jitter, integrated from 1 kHz to 300 MHz, was 82 fs at 102 GHz. It also achieved the $FoM{_{{JIT}}}$ of -248.2 dB, which is the best among the state-of-the-art W-band frequency synthesizers.

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