4.6 Article

Ultraviolet Photodetectors Based on In-Ga-ZnO Field-Effect Diodes With NiO Capping Layer

Related references

Note: Only part of the references are listed.
Review Polymer Science

Recent progress in organic field-effect transistor-based integrated circuits

Yongkun Yan et al.

Summary: Organic integrated circuits have made progress in design and fabrication, covering both digital and analog circuits with improvements in structure, manufacturing process, and performance. Additionally, modeling and simulation of organic integrated circuits are key issues for future development in organic electronics.

JOURNAL OF POLYMER SCIENCE (2022)

Article Chemistry, Multidisciplinary

Giant Photoresponsivity and External Quantum Efficiency in a Contact-Engineered Broadband a-IGZO Phototransistor

Yi-Hsui Lai et al.

Summary: This study presents a high-performance broadband amorphous In-Ga-Zn-O phototransistor with wide spectral response, high responsivity, and fast response time, achieved by using an engineered Ni/Ti bilayer metal contact.

ADVANCED FUNCTIONAL MATERIALS (2022)

Article Materials Science, Multidisciplinary

Distinct UV-Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer

Yikai Liao et al.

Summary: A monolithic integration strategy combining nanopillar antireflective structure and IGZO ultraviolet absorbing layer was proposed to enhance the ultraviolet-visible spectral responsivity of GaAs photodetectors. Significant responsivity enhancement was achieved, providing great promises for advanced GaAs-based ultraviolet-visible optoelectronics.

ADVANCED OPTICAL MATERIALS (2022)

Article Engineering, Electrical & Electronic

UV-photocurrent response of zinc oxide based devices: Application to ZnO/PEDOT:PSS hydrid Schottky diodes

Douglas Henrique Vieira et al.

Summary: The study presented the fabrication of Schottky diodes using spray-coated ZnO and PEDOT:PSS, with analysis on characteristic curves and the effect of UV irradiation on device parameters such as ideality factor and Schottky barrier height. Additionally, the research demonstrated a transition in photocurrent response from bimolecular to monomolecular recombination processes at higher UV intensity levels, attributed to molecular oxygen dynamics at the semiconductor/air interface.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING (2021)

Article Chemistry, Multidisciplinary

High Performance Flexible Visible-Blind Ultraviolet Photodetectors with Two-Dimensional Electron Gas Based on Unconventional Release Strategy

Yi-Yu Zhang et al.

Summary: In this study, high performance flexible AlGaN/GaN 2DEG-IPDs have been demonstrated by utilizing AlGaN/GaN heterostructure membranes, which were engineered to reduce dark current and boost photocurrent. The use of 2DEG layer in transferrable membranes holds great promise for advanced UV detection systems in various biomedical and environmental applications.

ACS NANO (2021)

Article Engineering, Electrical & Electronic

Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-SiC n-p-n Bipolar Phototransistor

Shuwen Guo et al.

Summary: The two-terminal 4H-SiC n-p-n bipolar phototransistor detector (PTD) demonstrated high optical gain and linear response to UV light, showing significance in developing high-performance SiC-based bipolar phototransistors.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

Article Chemistry, Multidisciplinary

Highly Efficient Broadband Solar-Blind UV Photodetector Based on Gd2O3:Eu3+-PMMA Composite Film

Hong Jia et al.

ADVANCED MATERIALS INTERFACES (2020)

Article Engineering, Electrical & Electronic

Realization of a Self-Powered InGaZnO MSM UV Photodetector Using Localized Surface Fluorine Plasma Treatment

Chun-Ying Huang et al.

ACS APPLIED ELECTRONIC MATERIALS (2020)

Article Multidisciplinary Sciences

Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductor

Byeong Hyeon Lee et al.

SCIENTIFIC REPORTS (2019)

Article Engineering, Electrical & Electronic

Improving Reliability of High-Performance Ultraviolet Sensor in a-InGaZnO Thin-Film Transistors

Yu-Lin Tsai et al.

IEEE ELECTRON DEVICE LETTERS (2019)

Article Nanoscience & Nanotechnology

All-Oxide Thin Film Transistors and Rectifiers Enabling On-Chip Capacitive Energy Storage

Zhenwei Wang et al.

ADVANCED ELECTRONIC MATERIALS (2019)

Article Nanoscience & Nanotechnology

High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction

Jingjing Yu et al.

ACS APPLIED MATERIALS & INTERFACES (2018)

Article Materials Science, Multidisciplinary

Simple fabrication of UV photo-detector based on NiO/ZnO structure grown by hydrothermal process

Shaoying Huang et al.

FUNCTIONAL MATERIALS LETTERS (2018)

Article Engineering, Electrical & Electronic

Enhanced temperature and light stability of amorphous indium-gallium-zinc oxide thin film transistors by interface nitrogen doping

Xiaoming Huang et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2018)

Article Engineering, Electrical & Electronic

Oxide Thin-Film Transistors With IMO and IGZO Stacked Active Layers for UV Detection

Huiling Lu et al.

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2017)

Article Engineering, Electrical & Electronic

A 13.56-MHz Low-Voltage and Low-Control-Loss RF-DC Rectifier Utilizing a Reducing Reverse Loss Technique

Yuh-Shyan Hwang et al.

IEEE TRANSACTIONS ON POWER ELECTRONICS (2014)

Article Automation & Control Systems

A ZigBee-Based Wireless Sensor Network Node for Ultraviolet Detection of Flame

Pedro Cheong et al.

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS (2011)

Article Electrochemistry

Ti/Au ohmic contacts to Al-doped n-ZnO grown by pulsed laser deposition

JJ Chen et al.

JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2006)