4.6 Article

Ultraviolet Photodetectors Based on In-Ga-ZnO Field-Effect Diodes With NiO Capping Layer

Journal

IEEE ELECTRON DEVICE LETTERS
Volume 43, Issue 8, Pages 1299-1302

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3183217

Keywords

Ultraviolet photodetector; In-Ga-ZnO; NiO capping layer; thin-film transistor; field-effect diode

Funding

  1. Ministry of Science and Technology, Taiwan [MOST 108-2221-E-006-200-MY2]

Ask authors/readers for more resources

This article introduces a UVPD based on IGZO thin-film transistors, which utilizes a NiO capping layer to improve UV detection performance. It demonstrates the advantages of this UVPD over traditional ones.
UltraUltraviolet photodetectors (UVPDs) based on diode-connected In-Ga-ZnO (IGZO) thin-film transistors (TFTs), called field-effect diodes (FEDs), are presented. A patterned NiO capping layer (CL) deposited on the top surface of the IGZO channel forming a heterojunction (HJ) was employed to further improve UV detection performance. Experimental results show that FED-based UVPDs have advantages over traditional TFT-based UVPDs, achieving a minimum dark current without additional gate bias and a wider bias range for detection measurements. UVPDs based on the 30-nm-thick IGZO FED with NiO CL show a photoresponsivity and photosensitivity of up to 1376 A/W and 9.10 x 10(7) A/A at 275 nm under V-D = -1.5 V, which is about 25x and 1480x higher than the case without NiO CL. These improvements are due to the fact that the NiO CL/IGZO HJ reduces the effective channel thickness to suppress dark current and provide additional optically generated electrons in the channel and an additional negative threshold voltage shift to enhance the photocurrent.

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available