Journal
IEEE ELECTRON DEVICE LETTERS
Volume 43, Issue 8, Pages 1367-1370Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3185991
Keywords
Metals; Couplings; Contact resistance; Tunneling; Logic gates; MOSFET; Leakage currents; Carbon nanotube (CNT); CMOS scaling; contact resistance; leakage current; metal hybridization
Categories
Funding
- Taiwan Semiconductor Manufacturing Company
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Carbon nanotube field effect transistors (CNFETs) have potential applications in future logic technology, but contact resistance and leakage currents could limit their scaling. The coupling between contact metal and CNT is found to impact both contact resistance and leakage current. A compromise for contact and extension lengths suitable for digital logic is proposed.
Carbon nanotube field effect transistors (CNFETs) have potential applications in future logic technology as they display good electrostatic control and excellent transport properties. However, contact resistance and leakage currents could limit scaling of CNFETs. Non-equilibrium Green's function (NEGF) simulation investigates that coupling between contact metal and CNT impacts both contact resistance and leakage current. The physical mechanisms underlying the effects are analyzed. A model with calibrated metal coupling strength from experimental data projects I-ON-I-OFF design space to understand the trade-off between shrinking contact and extension lengths. For CNT with diameter of 1 nm, both contact and extension lengths greater than 8 nm are a good compromise between I-ON and I-OFF for digital logic in advanced technology nodes.
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