Journal
IEEE ELECTRON DEVICE LETTERS
Volume 43, Issue 10, Pages 1677-1680Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2022.3201072
Keywords
Aluminum-doped indium tin zinc oxide; on-current boosting effect; oxide semiconductor; thin-film transistor; trench structure
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Funding
- National Research Foundation of Korea (NRF) Grant through the Korean Government [Ministry of Science and ICT (MSIT)] [2018R1A2A3075518]
- LG Display under LG Display (LGD)-Korea Advanced Institute of Science and Technology (KAIST) Incubation Program
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The thin-film transistor architecture introduced a trench between the source and drain electrode to enhance current flow, resulting in superior on-current performance and low turn-on voltage.
This letter presents a thin-film transistor architecture, in which a trench is introduced between the source and drain electrode to enhance current flow. The top-gate top-contact oxide Trench thin-film transistor has a superior on-current per width of 27.7 mu A/mu m at a drain voltage of 4.1 V. It also has a good subthreshold swing of 0.122 V/dec and turn-on voltage of 0.4 V. This study explores the operating mechanism of the high-current driving Trench oxide thin-film transistor.
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