Related references
Note: Only part of the references are listed.High-Responsivity and Fast-Response Ultraviolet Phototransistors Based on Enhanced p-GaN/AlGaN/GaN HEMTs
Haiping Wang et al.
ACS PHOTONICS (2022)
Effective Leakage Current Reduction in GaN Ultraviolet Avalanche Photodiodes With an Ion-Implantation Isolation Method
Minkyu Cho et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)
High gain, large area, and solar blind avalanche photodiodes based on Al-rich AlGaN grown on AlN substrates
Pramod Reddy et al.
APPLIED PHYSICS LETTERS (2020)
Do all screw dislocations cause leakage in GaN-based devices?
Jin Wang et al.
APPLIED PHYSICS LETTERS (2020)
Highly Enhanced Inductive Current Sustaining Capability and Avalanche Ruggedness in GaN p-i-n Diodes With Shallow Bevel Termination
Kai-Wen Nie et al.
IEEE ELECTRON DEVICE LETTERS (2020)
Polarization Enhanced GaN Avalanche Photodiodes With p-type In0.05Ga0.95N Layer
Haiping Wang et al.
IEEE PHOTONICS JOURNAL (2020)
60 A/W high voltage GaN avalanche photodiode demonstrating robust avalanche and high gain up to 525K
Dong Ji et al.
APPLIED PHYSICS LETTERS (2020)
Uniform and High Gain GaN p-i-n Ultraviolet APDs Enabled by Beveled-Mesa Edge Termination
Wangping Wang
IEEE PHOTONICS TECHNOLOGY LETTERS (2020)
Deeply and vertically etched butte structure of vertical GaN p-n diode with avalanche capability
Hayata Fukushima et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Design and Fabrication of GaN p-n Junction Diodes With Negative Beveled-Mesa Termination
Takuya Maeda et al.
IEEE ELECTRON DEVICE LETTERS (2019)
Surface smoothing with BCl3 plasma post-treatment to improve the performance of GaN avalanche photodiodes
Wangping Wang et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Vertical GaN p-n diode with deeply etched mesa and the capability of avalanche breakdown
Hayata Fukushima et al.
APPLIED PHYSICS EXPRESS (2019)
Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range
L. Hahn et al.
APPLIED PHYSICS LETTERS (2018)
p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes
Mi-Hee Ji et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2018)
Observation and discussion of avalanche electroluminescence in GaN p-n diodes offering a breakdown electric field of 3MVcm-1
S. Mandal et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
AlGaN ultraviolet Avalanche photodiodes based on a triple-mesa structure
Q. Cai et al.
APPLIED PHYSICS LETTERS (2018)
Ionization-Enhanced AlGaN Heterostructure Avalanche Photodiodes
Z. G. Shao et al.
IEEE ELECTRON DEVICE LETTERS (2017)
Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays
Mi-Hee Ji et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2016)
Comparison of AlGaN p-i-n ultraviolet avalanche photodiodes grown on free-standing GaN and sapphire substrates
Jeomoh Kim et al.
APPLIED PHYSICS EXPRESS (2015)
AlxGa1-xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than 105
Jeomoh Kim et al.
IEEE PHOTONICS TECHNOLOGY LETTERS (2015)
Significant Performance Improvement in AlGaN Solar-Blind Avalanche Photodiodes by Exploiting the Built-In Polarization Electric Field
Zhenguang Shao et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2014)
Back-illuminated separate absorption and multiplication AlGaN solar-blind avalanche photodiodes
Y. Huang et al.
APPLIED PHYSICS LETTERS (2012)
High-voltage mesa-structure GaN Schottky rectifiers processed by dry and wet etching
TG Zhu et al.
APPLIED PHYSICS LETTERS (2000)