Journal
DIAMOND AND RELATED MATERIALS
Volume 129, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2022.109340
Keywords
Single -crystal diamond; MEMS; Micro cantilever; Pressure; Energy dissipation
Categories
Funding
- JSPS KAKENHI [20H02212, 22K18957]
- JSPS Japan [JPJSBP120227203]
- Chinese Academy of Sciences, China [JPJSBP120227203]
- Murata Science Foundation
- Iketani Science and Technology Foundation
- Tsukuba Global Innovation Promotion Agency
- Nanotechnology Platform projects - Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan
Ask authors/readers for more resources
In this study, we investigated the effect of ambient gas pressure on the quality factor of single-crystal diamond micro cantilevers. The results show that the quality factor remains stable at low pressures but decreases significantly as the pressure increases.
Single-crystal diamond (SCD) is a prominent semiconductor material due to its superior mechanical and physical properties. From the viewpoint of practical application, a low vacuum or atmospheric environment are preferred. Here we systematically investigated the effect of ambient gas pressure on the quality-factor (Q-factor) of SCD micro cantilevers, and analyzed the disparate energy dissipation mechanisms. The Q-factor around 7500 was found to be almost stable for ambient pressure <10 Pa, then decreased sharply by about three orders of magnitude with the pressure increasing up to 105 Pa gradually. The ambient pressure ranging from 10-3 to 105 Pa can be defined as intrinsic, molecular, and viscous regimes by Knudsen number. We found that the Q-factors of the SCD cantilevers can be well described by the analytical models corresponding to the three regimes.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available