Journal
CHEMICAL PHYSICS LETTERS
Volume 804, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.cplett.2022.139876
Keywords
CVD; 2D Bi2S3; NIR photodetectors
Funding
- U.S. National Science Foundation [1831133, 2122044]
- National Science Foundation [ECCS-1542015]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [2122044] Funding Source: National Science Foundation
- Div Of Chem, Bioeng, Env, & Transp Sys
- Directorate For Engineering [1831133] Funding Source: National Science Foundation
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This paper reports the chemical vapor deposition of 2D bismuth sulfide for the first time. The 2D Bi2S3-based field-effect transistor exhibits n-type electron mobility and the 2D Bi2S3-based photodetector shows high photo responsivity, external quantum efficiency, detectivity, and linear dynamic range. The results suggest that Bi2S3 has promising potential for next-generation electronic and optoelectronic devices.
Herein, we report for the first time, the chemical vapor deposition of 2D bismuth sulfide (Bi). The 2D Bi2S3-based field-effect transistor showed an n-type electron mobility of 12.5 cm(-2)V(-1)s(-1) with an on/off ratio of 10. Under 785 nm illumination, the 2D Bi2S3-based photodetector exhibited a photo responsivity of 16 AW(-1), an external quantum efficiency of 2500%, a detectivity in the order of 10(10) Jones and a linear dynamic range of 35 dB with a fast response time of 100 ms. Our results suggest that Bi2S3 could be a promising new 2D material for the next-generation electronic and optoelectronic devices.
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