Al3+ doping induced changes of structural, morphology, photoluminescence, optical and electrical properties of SnO2 thin films as alternative TCO for optoelectronic applications

Highly transparent and conductive pure (SnO2) and aluminum doped tin oxide (Al:SnO2) thin films were deposited on glass substrates by the sol-gel spin-coating method. The structural, morphological, optical and electrical properties of the prepared thin films at different doping rates have been studied. X-ray diffraction results revealed that all the films were polycrystalline in nature with a tetragonal rutile structure. SEM images of the analyzed films showed a homogeneous surface morphology, composed of nanocrystalline grains. The EDS results confirmed the presence of Sn and O elements in pure SnO2 and Sn, O, Al in doped SnO2 thin films. The optical results revealed a high transmittance greater than 85% in the visible and near infrared and a band gap varying between 3.82 and 3.89 eV. PL spectra at room temperature showed that the most dominant defects correspond to oxygen vacancies. A low resistivity of order varying between 10-3 and 10-4 omega cm and a high figure of merits ranging between 10-3 and 10-2 omega- 1 in the visible range were obtained. The best performances were obtained for samples containing 2 at. % Al, which could be used as an alternative TCO layer for future opto-electronic devices.

Automated summary

Highly transparent and conductive thin films of pure and aluminum doped tin oxide were prepared on glass substrates using the sol-gel spin-coating method. The films exhibited polycrystalline structure, homogeneous surface morphology, and high transmittance in the visible and near infrared. The doped films showed the presence of additional elements and a band gap ranging from 3.82 to 3.89 eV. The films also displayed low resistivity and high figure of merits in the visible range, with the best performance observed for samples containing 2% aluminum.