Room temperature tunability of ferroelectricity and dielectricity in La and Mn codoped BiFeO3 nanoflakes: Implications for electronic devices applications

This study sheds a light on the in-situ growth of nanoflakes structure in Bi0.9La0.1Fe0.5Mn0.5O3 (BLFMO) thin film. The BLFMO thin films of various thicknesses were grown on LaNiO3 (LNO) coated Si (100) substrates using pulsed laser deposition technique. A long-range crystal structure of the as prepared BLFMO thin films was studied by X-ray diffraction measurements, which shows that the LNO buffer layer allows growth for a specific orientation. The compact and densely packed nanoflake structures in BLFMO thin film samples were confirmed by surface morphological investigations. To measure the polarization versus electric field (p-E) loop of BLFMO chip samples, a standard bipolar sinusoidal waveform with its magnitude of 250 kV/cm was applied at the frequency of 1 kHz. The maximum saturation and remnant polarizations of 104.50 mu C/cm2 and 86.24 mu C/cm2 respectively were probed for a critical thickness (420 nm) of the BLFMO layer. The voltage polarity-dependent leakage current behavior of Ag/BLFMO/LNO thin-film capacitor is thoroughly explored in detail. The value of leakage current density was observed from 1.16 x 10-4 to 2.24 x 10-5 J/cm2 for BLFMO thin films at an external applied electric field of 300 kV/cm. The highest tunability -60.20% and minimum temperature capacitance coefficient -1.23 x 10-3 were also observed for the same critical thickness of proposed chip element. The present study may open up a new opportunity to fabricate thin film based ferroelectric memory devices.

Automated summary

This study investigates the in-situ growth of nanoflakes structure in Bi0.9La0.1Fe0.5Mn0.5O3 (BLFMO) thin films. The study demonstrates that the use of a LNO buffer layer allows for controlled growth of BLFMO thin films with a specific crystal structure. The compact and densely packed nanoflake structures in the BLFMO thin film samples are confirmed by surface morphological investigations. The study also explores the leakage current behavior and tunability of BLFMO thin films, presenting valuable insights for the fabrication of thin film based ferroelectric memory devices.