4.7 Article

Irradiation-induced amorphization of UO2 films prepared by spraying-assisted combustion synthesis

Journal

APPLIED SURFACE SCIENCE
Volume 603, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.apsusc.2022.154437

Keywords

UO2 thin films; Solution combustion synthesis; Ion irradiation; Amorphization

Funding

  1. U.S. Department of Energy's (DOE) National Nuclear Security Administration (NNSA) [DE-NA0003888]
  2. U.S. National Science Foundation (NSF) [PHY-2011890]
  3. JINA-CEE NSF Physics Frontiers Centers [1430152]
  4. Fulbright U.S. Scholar grant
  5. U.S. Army Research Office [W911NF2110045]
  6. Division Of Physics
  7. Direct For Mathematical & Physical Scien [1430152] Funding Source: National Science Foundation

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Spraying-assisted combustion synthesis was used to prepare UO2 films with various thicknesses and grain sizes. The incorporation of Mg influenced the crystallinity and structural changes of the films under irradiation.
Spraying-assisted combustion synthesis with uranyl nitrate -acetylacetone -2-methoxyethanol solutions was used to prepare UO2 films on an aluminum alloy substrate. The tuning of the spraying parameters and annealing temperatures allowed the preparation of UO2 films with thicknesses varying from 10-300 nm and 5-10 nm UO2 grain size. High-resolution electron microscopy and X-ray photoelectron spectroscopy showed that increasing the annealing temperature promotes Mg diffusion from the substrate into the films. The incorporation of Mg reduced the overall crystallinity of the films. The irradiation with Ar2+ ions (1.7 MeV energy and a fluence of 2 x 1016 ions/cm2) did not degrade the quality of the films. However, the Mg content significantly influenced the irradiation-induced restructuring of the UO2 films. Irradiated films with low or no Mg content exhibit high crystallinity, and the UO2/Al interfacial layer becomes highly porous. Films with higher Mg content are mostly amorphized after irradiation. The origin of irradiation-induced amorphization was related to the formation of MgyU1-yO2 +/- xsolid solutions. Chemically complex, pore-free, and amorphous Mg-Al-O film/substrate interfacial layers enable continuous Mg diffusion during irradiation. Furthermore, the gradual increase in Mg amounts triggers irradiation-induced precipitation of a crystalline MgO-rich phase within the amorphous films.

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