Related references
Note: Only part of the references are listed.Atomic mass dependency of a localized phonon mode in SiGe alloys
Sylvia Yuk Yee Chung et al.
AIP ADVANCES (2021)
Dependency of a localized phonon mode intensity on compositional cluster size in SiGe alloys
Sylvia Yuk Yee Chung et al.
AIP ADVANCES (2021)
Anomalous low energy phonon dispersion in bulk silicon-germanium observed by inelastic x-ray scattering
R. Yokogawa et al.
APPLIED PHYSICS LETTERS (2020)
Development of interatomic potential of Ge(1-x-y) SixSny ternary alloy semiconductors for classical lattice dynamics simulation
Motohiro Tomita et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2018)
Phonon Lifetime Observation in Epitaxial ScN Film with Inelastic X-Ray Scattering Spectroscopy
H. Uchiyama et al.
PHYSICAL REVIEW LETTERS (2018)
Clustering/anticlustering effects on the GeSi Raman spectra at moderate (Ge,Si) contents: Percolation scheme vs. ab initio calculations
V. J. B. Torres et al.
JOURNAL OF APPLIED PHYSICS (2017)
Enhanced nickelidation rate in silicon nanowires with interfacial lattice disorder
Shuichiro Hashimoto et al.
JOURNAL OF APPLIED PHYSICS (2017)
Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors
S. Mukherjee et al.
PHYSICAL REVIEW B (2017)
Lattice Thermal Conductivity of the Binary and Ternary Group-IV Alloys Si-Sn, Ge-Sn, and Si-Ge-Sn
S. N. Khatami et al.
PHYSICAL REVIEW APPLIED (2016)
Growth of 2 inch Si0.5Ge0.5 bulk single crystals
Kyoichi Kinoshita et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
Phosphorus doping of Si nanocrystals embedded in silicon oxynitride determined by atom probe tomography
Hubert Gnaser et al.
JOURNAL OF APPLIED PHYSICS (2014)
Phonon transport analysis of silicon germanium alloys using molecular dynamics simulations
Takuma Hori et al.
JOURNAL OF APPLIED PHYSICS (2013)
Re-examination of the SiGe Raman spectra: Percolation/one-dimensional-cluster scheme and ab initio calculations
O. Pages et al.
PHYSICAL REVIEW B (2012)
Enhanced thermoelectric figure of merit in SiGe alloy nanowires by boundary and hole-phonon scattering
Julio A. Martinez et al.
JOURNAL OF APPLIED PHYSICS (2011)
Role of Disorder and Anharmonicity in the Thermal Conductivity of Silicon-Germanium Alloys: A First-Principles Study
Jivtesh Garg et al.
PHYSICAL REVIEW LETTERS (2011)
Diameter dependence of SiGe nanowire thermal conductivity
Zhao Wang et al.
APPLIED PHYSICS LETTERS (2010)
Thermoelectric power generation using large-area Si/SiGe pn-junctions with varying Ge content
M. Wagner et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2007)
Raman spectroscopy of Si1-xGe epilayers
F Pezzoli et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2005)
Growth and fundamental properties of SiGe bulk crystals
I Yonenaga
JOURNAL OF CRYSTAL GROWTH (2005)
Disorder-induced broadening of transverse acoustic phonons in SixGe1-x mixed crystals
A Béraud et al.
PHYSICA B-CONDENSED MATTER (2004)
Growth of homogeneous mixed crystals of In0.3Ga0.7As by the traveling liquidus-zone method
K Kinoshita et al.
JOURNAL OF CRYSTAL GROWTH (2002)
Thermal and electrical properties of Czochralski grown GeSi single crystals
I Yonenaga et al.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2001)
Homogeneous In0.3Ga0.7As crystal growth by the traveling liquidus-zone method
K Kinoshita et al.
JOURNAL OF CRYSTAL GROWTH (2001)
An X-ray scattering beamline for studying dynamics
AQR Baron et al.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2000)
Share Paper
