Neutron radiation-resistant aluminum nitride memristor

A memristor is promising as an electronic synapse or next-generation nonvolatile memory, and its radiation resistance has recently received extensive attention for broader application fields. We fabricated Al/AlN/TiN crossbar arrays and investigated their resistive switching properties and neutron radiation-resistant performance. Al/AlN/TiN memory devices have many excellent features, such as operating currents down to 10 mu A, memory endurance over 120 cycles, resistance window greater than 10(4), and retention time in excess of 10(4) s. More importantly, the memory devices with different resistance states still maintain remarkable resistive switching behaviors after irradiating with a dose of neutron radiation up to 1 x 10(14) n/cm(2), demonstrating outstanding potential application in radiation-resistant electronics. Published under an exclusive license by AIP Publishing.

Automated summary

Researchers fabricated Al/AlN/TiN crossbar arrays as memory devices, which exhibit excellent resistive switching properties and neutron radiation-resistant performance. The memory devices maintained remarkable resistive switching behaviors after irradiating with neutron radiation, showing outstanding potential for radiation-resistant electronics applications.