Journal
APPLIED PHYSICS LETTERS
Volume 121, Issue 7, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0099781
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Funding
- National Natural Science Foundation of China
- Fundamental Research Funds for the Central Universities
- [51972077]
- [3072022TS2507]
- [3072022CF2504]
- [3072022QBZ2502]
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The understanding of the relationship between coordination configuration of single-atoms (SAs) and their properties is still a great challenge. In this study, a facile method was developed to construct Fe-SAs on onion-like nitrogen-doped nanocarbons supported by graphene (ONCG). Different from symmetrical planar Fe-N-4 moieties, the Fe-SAs coordinated with N atoms were located above the plane of the curved graphene and exhibited antenna-like structures. The non-planar Fe-SAs possessed greatly increased dielectric loss property compared to their counterparts with symmetrical planar Fe-SAs, due to the improved conduction and polarization losses.
The understanding of the relationships between the coordination configuration of single-atoms (SAs) and their properties remains a great challenge. In this manuscript, a facile method is developed to construct Fe-SAs on onion-like nitrogen-doped nanocarbons supported by graphene (ONCG). In contrast to the symmetrical planar Fe-N-4 moieties, the Fe-SAs coordinated with N atoms are located above the plane of the curved graphene and exhibited antenna-like structures. The ONCG with non-planar Fe-N-4 moieties possesses greatly increased dielectric loss property compared to their counterparts with symmetrical planar Fe-SAs. In-depth theoretical calculations reveal that the unique geometric structure of the non-planar Fe-SAs improves both conduction and polarization losses significantly, which is attributed to the increased dielectric property. The increased dielectric property endows Fe-SAs@ONCG with an excellent electromagnetic wave absorption at a low filler ratio of 10 wt. %. Our results describe an efficient way for the development of non-planar SAs for dielectric applications. Published under an exclusive license by AIP Publishing.
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