4.6 Article

Single G centers in silicon fabricated by co-implantation with carbon and proton

Related references

Note: Only part of the references are listed.
Article Engineering, Electrical & Electronic

Qubits made by advanced semiconductor manufacturing

A. M. J. Zwerver et al.

Summary: Silicon spin qubits can be fabricated using optical lithography and industrial processing in a 300 mm semiconductor manufacturing facility. This approach allows for the production of nanoscale gate patterns with high yield. The quantum dots exhibit good tunnel barrier control, making them suitable for fault-tolerant two-qubit gates.

NATURE ELECTRONICS (2022)

Article Multidisciplinary Sciences

Wafer-scale nanofabrication of telecom single-photon emitters in silicon

Michael Hollenbach et al.

Summary: Researchers demonstrate the controlled fabrication of telecom-wavelength quantum emitters in silicon wafers using focused ion beams, providing a viable pathway for scalable photonic quantum processors.

NATURE COMMUNICATIONS (2022)

Article Multidisciplinary Sciences

Optical observation of single spins in silicon

Daniel B. Higginbottom et al.

Summary: This work successfully achieved individually addressable and optically detectable photon-spin interfaces in silicon, providing opportunities for constructing integrated silicon-based quantum information networks in the telecommunications band.

NATURE (2022)

Article Nanoscience & Nanotechnology

Detection of Single W-Centers in Silicon

Yoann Baron et al.

Summary: This study demonstrates the detection of single intrinsic defects in silicon and reveals new information about their radiation damage center properties. The microscopic structure and radiative recombination mechanism of these defects below the silicon bandgap are identified. These results are of great significance for conducting quantum research based on intrinsic luminescent defects in silicon.

ACS PHOTONICS (2022)

Article Physics, Multidisciplinary

Identification of a Telecom Wavelength Single Photon Emitter in Silicon

Peter Udvarhelyi et al.

Summary: The exact microscopic structure of the G photoluminescence center in silicon is identified through first-principles calculations, revealing that the observed fine structure of its optical signals originates from the athermal rotational reorientation of the defect. Additionally, the thermally activated motional averaging of the defect properties and the nature of the qubit state are discussed.

PHYSICAL REVIEW LETTERS (2021)

Article Physics, Multidisciplinary

Broad Diversity of Near-Infrared Single-Photon Emitters in Silicon

A. Durand et al.

Summary: Individual emitters in silicon belonging to seven different families of optically active point defects were detected, showing single photon emission over the 1.1-1.55 μm range. The analysis of these emitters revealed a constant emission intensity at low temperatures, making them promising systems for Si-based quantum technologies.

PHYSICAL REVIEW LETTERS (2021)

Review Physics, Applied

Material platforms for defect qubits and single-photon emitters

Gang Zhang et al.

APPLIED PHYSICS REVIEWS (2020)

Article Engineering, Electrical & Electronic

Single artificial atoms in silicon emitting at telecom wavelengths

W. Redjem et al.

NATURE ELECTRONICS (2020)

Editorial Material Engineering, Electrical & Electronic

A single silicon colour centre resolved

Stephanie Simmons

NATURE ELECTRONICS (2020)

Article Quantum Science & Technology

Silicon-Integrated Telecommunications Photon-Spin Interface

L. Bergeron et al.

PRX QUANTUM (2020)

Article Quantum Science & Technology

Donor Spins in Silicon for Quantum Technologies

Andrea Morello et al.

ADVANCED QUANTUM TECHNOLOGIES (2020)

Article Multidisciplinary Sciences

A two-qubit gate between phosphorus donor electrons in silicon

Y. He et al.

NATURE (2019)

Article Multidisciplinary Sciences

A programmable two-qubit quantum processor in silicon

T. F. Watson et al.

NATURE (2018)

Article Materials Science, Multidisciplinary

Highly enriched 28Si reveals remarkable optical linewidths and fine structure for well-known damage centers

C. Chartrand et al.

PHYSICAL REVIEW B (2018)

Article Materials Science, Multidisciplinary

Optical properties of an ensemble of G-centers in silicon

C. Beaufils et al.

PHYSICAL REVIEW B (2018)

Article Chemistry, Multidisciplinary

Co-Implantation of Carbon and Protons: An Integrated Silicon Device Technology Compatible Method to Generate the Lasing G-Center

Dilla D. Berhanuddin et al.

ADVANCED FUNCTIONAL MATERIALS (2012)

Article Optics

Room temperature stable single-photon source

A Beveratos et al.

EUROPEAN PHYSICAL JOURNAL D (2002)