Journal
APPLIED PHYSICS LETTERS
Volume 121, Issue 11, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0103978
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Funding
- Department of Energy/National Nuclear Security Administration [DE-NA000392]
- Air Force Office of Scientific Research GAME MURI [FA9550-18-1-0479]
- Ohio Department of Higher Education and Strategic Council for Higher Education under Ohio House Bill 49 of the 132nd General Assembly
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In this study, we have developed an in situ Mg doping technique in plasma-assisted molecular beam epitaxy for compensating Si dopants and eliminating parasitic leakage paths in beta-Ga2O3. The technique achieved both abrupt and uniform Mg doping profiles over a wide range of concentrations. Capacitance-voltage characteristics confirmed the compensating effect of Mg dopants. Mg delta-doping was also shown to effectively eliminate source leakage in beta-Ga2O3 metal-semiconductor field effect transistor structure.
In this work, we develop in situ Mg doping techniques in plasma-assisted molecular beam epitaxy (PAMBE) of beta-Ga2O3 to compensate Si dopants at the substrate epilayer growth interface and eliminate parasitic leakage paths. Both abrupt and uniform Mg doping profiles over a wide range of concentrations were achieved in beta-Ga2O3 epilayers grown by PAMBE. Capacitance-voltage characteristics of Si and Mg co-doped samples confirmed the compensating effect of the Mg dopants. Mg delta-doping was then integrated into a beta-Ga2O3 metal-semiconductor field effect transistor structure and shown to be effective in eliminating source leakage. The results presented here show that Mg doping is a promising way to engineer insulating buffer layers for beta-Ga2O3 lateral devices grown by PAMBE.
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