Realization of p-type In1.75Sb0.25Se3 alloys for short-wave infrared photodetectors

The narrow-gap semiconductors (NGSs) with two-dimensional (2D) layered structures provide fundamental advantages, such as low noise and high quantum efficiency, for short-wave infrared (SWIR) optoelectronic devices. However, realizing high-performance photodetectors based on 2D NGSs with high photoresponsivity, low noise, and fast response speed remains a challenge. Here, we present the design, preparation, and characterization of an In2(1-x)Sb2xSe3 SWIR photodetector. Trivalent antimony (Sb3+) substitutional doping not only induced the beta '-beta phase transition at room temperature but also made the alloy a good candidate for the p-type semiconductor. Moreover, the individual In1.75Sb0.25Se3 nanoflake realized an excellent photoresponse in a broadband range from visible (405nm) to SWIR (1550nm) light with a photoresponsivity of 134A W-1 and a detectivity of 1.82x10(7) Jones. These performances were superior to the reported In2Se3, Sb2Se3, and other In or Sb selenide photodetectors, which indicated that the beta-In2(1-x)Sb2xSe3 alloy may provide a potential building block for short-wave infrared photodetectors.

Automated summary

In this study, a new type of SWIR photodetector based on In2(1-x)Sb2xSe3 material was designed and prepared, and it showed excellent photoresponse performance, indicating its potential as an important material for SWIR photodetectors.