Substitutional diffusion of Mg into GaN from GaN/Mg mixture

We evaluated Mg-diffusion into GaN from GaN/Mg mixture. The diffusion depth of Mg increased with diffusion temperature from 1100 degrees C to 1300 degrees C, whereas the Mg concentration remained constant at 2-3 x 10(18 )cm(-3) independent of temperature. The estimated activation energy for Mg diffusion was 2.8 eV, from which the substitutional diffusion mechanism was predicted. Mg-diffused GaN samples showed p-type conductivity with a maximum hole mobility of 27.7 cm(2) V-1 s(-1), suggesting that substitutional diffusion contributes to Mg activation. This diffusion technique can be used to easily form p-type GaN and has potential as a p-type selective doping technique.

Automated summary

The research evaluated the diffusion of Mg from GaN/Mg mixture into GaN. It was found that the diffusion depth of Mg increased with temperature, while the Mg concentration remained constant. The Mg-diffused GaN samples exhibited p-type conductivity with a high hole mobility.