4.7 Article

Electrical conductivity through π-π stacking in a two-dimensional porous gallium catecholate metal-organic framework

Journal

ANNALS OF THE NEW YORK ACADEMY OF SCIENCES
Volume 1518, Issue 1, Pages 226-230

Publisher

WILEY
DOI: 10.1111/nyas.14906

Keywords

electrical transport; metal-organic frameworks; porous conductors; semiconductor materials

Funding

  1. National Science Foundation [DMR-2105495, DMR-1956403]
  2. Research Corporation for Science Advances

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Metal-organic frameworks (MOFs) are hybrid materials with high surface areas but generally poor electrical conductivity. Recent research has shown that MOFs with high electrical conductivity have potential applications in energy storage and catalysis. However, there is limited understanding of the role of metal ions in these conductive MOFs.
Metal-organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energy storage and catalysis. Many recent reports investigating the fundamentals of charge transport in these materials focus on the role of the organic ligands. Less consideration, however, is given to the metal ion forming the MOF, which is almost exclusively a late first-row transition metal. Here, we report a moderately conductive porous MOF based on trivalent gallium and 2,3,6,7,10,11-hexahydroxytriphenylene. Gallium, a metal that has not been featured in electrically conductive MOFs so far, has a closed-shell electronic configuration and is present in its trivalent state-in contrast to most conductive MOFs, which are formed by open-shell, divalent transition metals. Our material, made without using any harmful solvents, displays conductivities on the level of 3 mS/cm and a surface area of 196 m(2)/g, comparable to transition metal analogs.

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