Ru-Doping-Induced Spin Frustration and Enhancement of the Room-Temperature Anomalous Hall Effect in La2/3Sr1/3MnO3 Films

In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in oxide heterostructures is still challenging due to the dilemma of mutually strong spin-orbit coupling and magnetic exchange interactions. Here, Ru-doping-enhanced AHE in La2/3Sr1/3Mn1-xRuxO3 epitaxial films is exploited. As the B-site Ru doping level increases up to 20%, the anomalous Hall resistivity at room temperature can be enhanced from n omega cm to mu omega cm scale. Ru doping leads to strong competition between the ferromagnetic double-exchange interaction and the antiferromagnetic superexchange interaction. The resultant spin frustration and spin-glass state facilitate a strong skew-scattering process, thus significantly enhancing the extrinsic AHE. The findings can pave a feasible approach for boosting the controllability and reliability of oxide-based spintronic devices.

Automated summary

The study finds that Ru doping can enhance the anomalous Hall effect at room temperature in transition-metal-oxide heterostructures. The competition between ferromagnetic double-exchange interaction and antiferromagnetic superexchange interaction due to Ru doping leads to spin frustration and spin-glass state, significantly enhancing the extrinsic anomalous Hall effect.