4.6 Article

Inkjet-Printed, Large-Area, Flexible Photodetector Array Based on Electrochemical Exfoliated MoS2 Film for Photoimaging

Journal

ADVANCED ENGINEERING MATERIALS
Volume 25, Issue 2, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adem.202200946

Keywords

electrochemical exfoliation; inkjet printing; photodetectors; 2D materials

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This study demonstrates a high-performance inkjet-printed flexible photodetector array based on stacked MoS2 nanosheets for the first time. By using electrochemical exfoliation and inkjet printing techniques, the researchers successfully obtained 2H phase MoS2 nanosheets and achieved excellent optoelectronic performance. Furthermore, a photodetector array was successfully constructed, and clear letter recognition was achieved. These results suggest that electrochemical exfoliation coupled with inkjet printing has great potential for the application of high-performance photodetector arrays.
Although a variety of MoS2-based photodetectors have been reported over the last few years, the controlled fabrication of large-area photodetector array for photoimaging remains a major challenge due to the low yield and poor quality of MoS2 film. Herein, a high-performance inkjet-printed flexible photodetector array based on stacked MoS2 nanosheets is demonstrated for the first time. The 2H phase MoS2 nanosheets is obtained by intercalating quaternary ammonium cation into MoS2 bulk. The inkjet-printed photodetector achieves excellent performance with a highest responsivity of 552.5 A W-1, detectivity of 1.19 x 10(12) Jones, and fast response and recovery time of 23 and 26 ms, respectively, at room temperature. Furthermore, a photodetector array with 85 pixels per inch is successfully constructed, and the letter of T is clearly recognized. These results indicate that electrochemical exfoliation coupled with inkjet printing has great prospect for application in high-performance photodetector array. Besides, the electrochemical exfoliation is also successfully applied to obtain the ink of In2Se3, black phosphorus (BP), and MoTe2. It is believed that this work paves the way for various potential printable optoelectronics based on 2D materials.

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