Outgassing of implanted He via short circuit transport along phase and grain boundaries in vapor co-deposited Cu-W nanocomposites

We investigate the response of physical vapor co-deposited copper (Cu)-tungsten (W) nanocomposites to helium (He) implantation. Nuclear reaction analysis (NRA) reveals that a substantial fraction of He implanted into these materials escapes during implantation. Analysis of nanocomposite microstructure shows that the He loss is likely due to its transport out of the material by diffusion along phase and grain boundaries. Our findings suggest that solid-state interfaces such as phase and grain boundaries are short circuit diffusion pathways for transport of He.(c) 2022 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Automated summary

We investigated the response of Cu-W nanocomposites prepared by physical vapor co-deposition to He implantation. Nuclear reaction analysis revealed that a significant portion of the implanted He escapes during the implantation process. Microstructural analysis of the nanocomposites suggested that the loss of He is likely due to its diffusion out of the material along phase and grain boundaries. Our findings suggest that solid-state interfaces, such as phase and grain boundaries, serve as shortcut diffusion pathways for He transport.