4.8 Article

Noninvasive and Direct Patterning of High- Resolution Full-Color Quantum Dot Arrays by Programmed Microwetting

Journal

ACS NANO
Volume 16, Issue 10, Pages 16598-16607

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.2c06032

Keywords

quantum dots; patterning; selective wetting; droplet; light-emitting diodes

Funding

  1. Global Frontier Hybrid Interface Materials (GFHIM) [2013M3A6B1078874]
  2. Nano . Material Technology Development Program [N R F-2021M3H4A3A01062963]
  3. National Research Founda-tion of Korea (NRF) - Ministry of Science and ICT

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This article introduces a noninvasive surface-wetting approach to pattern multicolor quantum-dot (QD) arrays on a photoprogrammed hole transport layer (HTL). By modifying the surface of HTLs and controlling solvent evaporation kinetics, the area-selective wetting of QD patterns is achieved, while preventing cross-contamination between different QD colloids. Prototype electroluminescent quantum dot light-emitting diode arrays with high current efficiency and brightness were successfully realized.
Although the commercialization of electroluminescent quantum-dot (QD) displays essentially demands multicolor patterning of QDs with sufficient scalability and uniformity, the implementation of QD patterning in a light emitting diode device is highly challenging, mainly due to the innate vulnerability of QDs and charge-transport layers. Here, we introduce a noninvasive surface-wetting approach for patterning full-color QD arrays on a photoprogrammed hole transport layer (HTL). To achieve noninvasiveness of QD patterning, surface-specific modification of HTLs was performed without degrading their performance. Moreover, engineering the solvent evaporation kinetics allows area-selective wetting of QD patterns with a uniform thickness profile. Finally, multicolor QD patterning was enabled by preventing cross-contamination between different QD colloids via partial fluoroencapsulation of earlier-patterned QDs. Throughout the overall QD patterning process, the optoelectronic properties of QDs and hole-transport layers are well preserved, and prototype electroluminescent quantum dot light-emitting diode arrays with high current efficiency and brightness were realized.

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