4.8 Article

A Polyanionic Strategy to Modify the Perovskite Grain Boundary for a Larger Switching Ratio in Flexible Woven Resistive Random-Access Memories

Related references

Note: Only part of the references are listed.
Article Chemistry, Multidisciplinary

Single Crystal Halide Perovskite Nonlinear Resistive Memory with Ultrahigh Switching Ratio

Lutao Li et al.

Summary: This study introduces an all-inorganic halide perovskite CsPbBr3 single crystal film (SCF) into resistive memory, demonstrating high-performance memory with ultrahigh switching ratio and fast switching speed. The interface S parameter of metal/CsPbBr3 SCF contact is 0.50, indicating a great interface contact contributing to steady high resistance state. The introduction of halide perovskite SCF in resistive random access memory shows great potential for future computing systems.

SMALL (2022)

Article Chemistry, Multidisciplinary

Surface-Anchored Acetylcholine Regulates Band-Edge States and Suppresses Ion Migration in a 21%-Efficient Quadruple-Cation Perovskite Solar Cell

Zhiang Zhang et al.

Summary: This study demonstrated that anchoring acetylcholine (ACh(+)) on the surface of a quadruple-cation perovskite can improve band alignment, minimize V-oc loss, and passivate defects, resulting in efficient and stable perovskite solar cells. The ACh(+) treatment significantly enhanced power conversion efficiency (PCE) and open-circuit voltage (V-oc) while reducing hysteresis index, making it a promising strategy for PSCs preparation.

SMALL (2022)

Review Nanoscience & Nanotechnology

Recent Progress of Organic-Inorganic Hybrid Perovskites in RRAM, Artificial Synapse, and Logic Operation

Cheng Zhang et al.

Summary: This review provides an overview of the structural, photoelectronic properties, and device fabrication technologies of organic-inorganic hybrid perovskites (OHPs). It discusses the recent progress and applications of OHPs in resistive random-access memory (RRAM), artificial synapses, and logic operation. The operational mechanisms, performance improvement strategies, challenges, and future development prospects of OHPs-based devices are also summarized.

SMALL SCIENCE (2022)

Article Physics, Applied

High-performance resistive switching memory with embedded molybdenum disulfide quantum dots

Xinna Yu et al.

Summary: In this study, molybdenum disulfide quantum dots were used to enhance the performance of resistive switching devices, resulting in lower switching voltages, uniform resistance states, improved endurance, and larger on/off ratios. The convergence of electric field distribution around the quantum dots is believed to enhance conductive filament formation, contributing to the optimization of device performance and furthering developments in data storage applications.

APPLIED PHYSICS LETTERS (2021)

Article Materials Science, Ceramics

Improvement of MAPbI3 perovskite blend with TiO2 nanoparticles as ReRAM device

Gregory Soon How Thien et al.

CERAMICS INTERNATIONAL (2020)

Article Nanoscience & Nanotechnology

Nicotinamide as Additive for Microcrystalline and Defect Passivated Perovskite Solar Cells with 21.7% Efficiency

Zhu Ma et al.

ACS APPLIED MATERIALS & INTERFACES (2020)

Review Materials Science, Multidisciplinary

Recent advances in organic-based materials for resistive memory applications

Yang Li et al.

INFOMAT (2020)

Article Materials Science, Multidisciplinary

Resistive switching performance of fibrous crosspoint memories based on an organic-inorganic halide perovskite

Pan Shu et al.

JOURNAL OF MATERIALS CHEMISTRY C (2020)

Review Chemistry, Multidisciplinary

Perovskites for Next-Generation Optical Sources

Li Na Quan et al.

CHEMICAL REVIEWS (2019)

Article Nanoscience & Nanotechnology

Enhanced Switching Ratio and Long-Term Stability of Flexible RRAM by Anchoring Polyvinylammonium on Perovskite Grains

Xiaofei Cao et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

Article Nanoscience & Nanotechnology

Control of Resistive Switching Voltage by Nanoparticle-Decorated Wrinkle Interface

Huiwu Mao et al.

ADVANCED ELECTRONIC MATERIALS (2019)

Article Materials Science, Multidisciplinary

Cycling-Induced Degradation of Organic-Inorganic Perovskite-Based Resistive Switching Memory

Yanyun Ren et al.

ADVANCED MATERIALS TECHNOLOGIES (2019)

Article Multidisciplinary Sciences

Manipulation of facet orientation in hybrid perovskite polycrystalline films by cation cascade

Guanhaojie Zheng et al.

NATURE COMMUNICATIONS (2018)

Article Materials Science, Multidisciplinary

Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory

Xiaoning Zhao et al.

JOURNAL OF MATERIALS CHEMISTRY C (2018)

Article Nanoscience & Nanotechnology

An All-Inorganic, Transparent, Flexible, and Nonvolatile Resistive Memory

Yuxi Yang et al.

ADVANCED ELECTRONIC MATERIALS (2018)

Article Chemistry, Multidisciplinary

Addition of adamantylammonium iodide to hole transport layers enables highly efficient and electroluminescent perovskite solar cells

Mohammad Mahdi Tavakoli et al.

ENERGY & ENVIRONMENTAL SCIENCE (2018)

Article Engineering, Electrical & Electronic

Transparent and Flexible Resistive Random Access Memory Based on Al2O3 Film With Multilayer Electrodes

Myeongcheol Kim et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)

Article Chemistry, Multidisciplinary

Iodine Vacancy Redistribution in Organic-Inorganic Halide Perovskite Films and Resistive Switching Effects

Xiaojian Zhu et al.

ADVANCED MATERIALS (2017)

Article Chemistry, Multidisciplinary

Flexible Hybrid Organic-Inorganic Perovskite Memory

Chungwan Gu et al.

ACS NANO (2016)

Article Multidisciplinary Sciences

Implementation of Complete Boolean Logic Functions in Single Complementary Resistive Switch

Shuang Gao et al.

Scientific Reports (2015)

Article Chemistry, Multidisciplinary

High Charge Carrier Mobilities and Lifetimes in Organolead Trihalide Perovskites

Christian Wehrenfennig et al.

ADVANCED MATERIALS (2014)

Review Materials Science, Multidisciplinary

Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

F. Pan et al.

MATERIALS SCIENCE & ENGINEERING R-REPORTS (2014)

Review Optics

The emergence of perovskite solar cells

Martin A. Green et al.

NATURE PHOTONICS (2014)

Article Multidisciplinary Sciences

Sequential deposition as a route to high-performance perovskite-sensitized solar cells

Julian Burschka et al.

NATURE (2013)

Article Chemistry, Physical

Flexible polymer memory devices derived from triphenylamine-pyrene containing donor-acceptor polyimides

An-Dih Yu et al.

JOURNAL OF MATERIALS CHEMISTRY (2012)

Review Chemistry, Multidisciplinary

Redox-Based Resistive Switching Memories

Rainer Waser

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY (2012)

Article Chemistry, Multidisciplinary

A Small-Molecule-Based Ternary Data-Storage Device

Hua Li et al.

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY (2010)

Review Chemistry, Multidisciplinary

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

Rainer Waser et al.

ADVANCED MATERIALS (2009)

Article Multidisciplinary Sciences

The missing memristor found

Dmitri B. Strukov et al.

NATURE (2008)

Review Materials Science, Multidisciplinary

Resistive switching in transition metal oxides

Akihito Sawa

MATERIALS TODAY (2008)

Article Nanoscience & Nanotechnology

Memristive switching mechanism for metal/oxide/metal nanodevices

J. Joshua Yang et al.

NATURE NANOTECHNOLOGY (2008)

Review Chemistry, Multidisciplinary

Nonvolatile memory elements based on organic materials

J. Campbell Scott et al.

ADVANCED MATERIALS (2007)

Article Physics, Applied

Reproducible switching effect in thin oxide films for memory applications

A Beck et al.

APPLIED PHYSICS LETTERS (2000)