4.5 Review

Metal Oxide Semiconductor Nanostructure Gas Sensors with Different Morphologies

Journal

CHEMOSENSORS
Volume 10, Issue 7, Pages -

Publisher

MDPI
DOI: 10.3390/chemosensors10070289

Keywords

semiconductor; metal oxide; morphology; gas sensor; sensing mechanism

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This review focuses on the development and application prospects of resistive gas sensors based on metal oxide semiconductors (MOSs), and introduces the application of different morphologies of metal oxides in sensor fabrication.
There is an increasing need for the development of low-cost and highly sensitive gas sensors for environmental, commercial, and industrial applications in various areas, such as hazardous gas monitoring, safety, and emission control in combustion processes. Considering this, resistive-based gas sensors using metal oxide semiconductors (MOSs) have gained special attention owing to their high sensing performance, high stability, and low cost of synthesis and fabrication. The relatively low final costs of these gas sensors allow their commercialization; consequently, they are widely used and available at low prices. This review focuses on the important MOSs with different morphologies, including quantum dots, nanowires, nanofibers, nanotubes, hierarchical nanostructures, and other structures for the fabrication of resistive gas sensors.

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