4.6 Article

Structural, Optical, Photoelectrochemical, and Electronic Properties of the Photocathode CuS and the Efficient CuS/CdS Heterojunction

Journal

ACS OMEGA
Volume 7, Issue 34, Pages 30233-30240

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsomega.2c03352

Keywords

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Funding

  1. Ministry of New and Renewable Energy (MNRE), Government of India for fellowship under the National Renewable Energy Fellowship program
  2. Department of Science and Technology (DST), Government of India for PhD fellowship under the DST-INSPIRE Scheme
  3. MAHAJYOTI for Mahatma Jyotiba Phule Research Fellowoship (MJPRF)

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We report a facile synthesis of CuS and CdS nanoparticles using a cheap solution-processed chemical bath method forming heterogeneous nucleation. The optical band gap of CuS is estimated to be 2.10 eV, indicating its potential application in inexpensive photocatalysis and solar cells. The valence band and conduction band positions of CuS and CdS are evaluated using cyclic voltammetry curves. The narrow conduction and valence band offset potentials measured at the CuS/CdS heterojunction are encouraging factors for the photoelectrochemical (PEC) application. The current density vs potential plots (J-V) support the improved short-circuit current density and determined power conversion efficiency (PCE) of the CuS/CdS heterojunction.
We report a facile synthesis of CuS and CdS nanoparticles using a cheap solution-processed chemical bath method forming heterogeneous nucleation. The optical, structural, photoelectrochemical (PEC), and electronic properties are studied by implementing relevant experimental techniques. The estimated optical band gap of & SIM;2.10 eV of CuS designates potential application in inexpensive photocatalysis and solar cells. Further, the valence band and conduction band positions of CuS and CdS are evaluated using cyclic voltammetry curves. Narrow conduction and valence band offset potentials measured at the CuS/CdS heterojunction are encouraging factors for the PEC application. The electronic properties are supported by the current density vs potential plots (J-V) with an improved short-circuit current density of 0.71 mA cm-2 for the heterojunction compared to bare CuS showing 0.15 mu A cm(-2). The determined PCE of the heterojunction CuS/CdS is 0.65%.

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