4.6 Article

Realization of Oriented and Nanoporous Bismuth Chalcogenide Layers via Topochemical Heteroepitaxy for Flexible Gas Sensors

Journal

RESEARCH
Volume 2022, Issue -, Pages -

Publisher

AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.34133/2022/9767651

Keywords

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Funding

  1. National Key Basic Research Program of China [2021YFB3200302]
  2. National Natural Science Foundation of China [51832001, 52102114]
  3. Fundamental Research Funds for the Central Universities of China
  4. Department of Science & Technology of Shaanxi Province [2020GXLH-Z-026, 2020GXLH-Z-027]
  5. Northwestern Polytechnical University [2020GXLH-Z-026, 2020GXLH-Z-027]
  6. China Postdoctoral Science Foundation [2021M692618, 2021M702657]
  7. Natural Science Foundation of Shaanxi Province [2021JQ-112]

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In this study, ultrathin nanoporous Bi2Se3 layers were epitaxially deposited on BiOCl nanosheets through a topochemical conversion process, resulting in strong electronic coupling and improved surface properties. The material exhibited superior room-temperature NO2 sensing performance under bent conditions, offering potential opportunities for practical applications.
Most van der Waals two-dimensional (2D) materials without surface dangling bonds show limited surface activities except for their edge sites. Ultrathin Bi2Se3, a topological insulator that behaves metal-like under ambient conditions, has been overlooked on its surface activities. Herein, through a topochemical conversion process, ultrathin nanoporous Bi2Se3 layers were epitaxially deposited on BiOCl nanosheets with strong electronic coupling, leading to hybrid electronic states with further bandgap narrowing. Such oriented nanoporous Bi2Se3 layers possessed largely exposed active edge sites, along with improved surface roughness and film forming ability even on inkjet-printed flexible electrodes. Superior room-temperature NO2 sensing performance was achieved compared to other 2D materials under bent conditions. Our work demonstrates that creating nanoscale features in 2D materials through topochemical heteroepitaxy is promising to achieve both favorable electronic properties and surface activity toward practical applications.

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